banner_page

HN3C51F-GR(TE85L,F

Trans GP BJT NPN 120V 0.1A 6-Pin SM T/R


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-HN3C51F-GR(TE85L,F
  • Package: SC-74, SOT-457
  • Datasheet: PDF
  • Stock: 417
  • Description: Trans GP BJT NPN 120V 0.1A 6-Pin SM T/R (Kg)

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 300mW
Frequency 100MHz
Number of Elements 2
Polarity NPN
Element Configuration Dual
Power Dissipation 300mW
Gain Bandwidth Product 100MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 120V
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 120V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
hFE Min 200
RoHS Status RoHS Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good