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HN4A51JTE85LF

Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-HN4A51JTE85LF
  • Package: SC-74A, SOT-753
  • Datasheet: PDF
  • Stock: 677
  • Description: Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74A, SOT-753
Number of Pins 5
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 300mW
Polarity PNP
Element Configuration Dual
Power - Max 300mW
Gain Bandwidth Product 100MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 120V
Collector Emitter Saturation Voltage -300mV
Max Breakdown Voltage 120V
Collector Base Voltage (VCBO) -120V
Emitter Base Voltage (VEBO) -5V
hFE Min 200
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet

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