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HN4B01JE(TE85L,F)

Bipolar Transistors - BJT Vceo=-50V Vceo=50V


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-HN4B01JE(TE85L,F)
  • Package: SOT-553
  • Datasheet: -
  • Stock: 505
  • Description: Bipolar Transistors - BJT Vceo=-50V Vceo=50V (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-553
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 100mW
Polarity NPN, PNP
Element Configuration Dual
Power - Max 100mW
Gain Bandwidth Product 80MHz
Transistor Type NPN, PNP (Emitter Coupled)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10MA 100MA
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 80MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
RoHS Status RoHS Compliant
See Relate Datesheet

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