banner_page

HN4C51J(TE85L,F)

Bipolar Transistors - BJT Trans LFreq 120V NPN NPN 0.1A


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-HN4C51J(TE85L,F)
  • Package: SC-74A, SOT-753
  • Datasheet: -
  • Stock: 171
  • Description: Bipolar Transistors - BJT Trans LFreq 120V NPN NPN 0.1A (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74A, SOT-753
Number of Pins 5
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 300mW
Polarity NPN
Element Configuration Dual
Power - Max 300mW
Gain Bandwidth Product 100MHz
Transistor Type 2 NPN (Dual) Common Base
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 120V
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 120V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
hFE Min 200
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good