Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | Module, Slotted |
Number of Pins | 4 |
Housing Material | Polysulfone |
Operating Temperature | -55°C~100°C |
Packaging | Bulk |
Published | 1997 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Type | Unamplified |
Max Operating Temperature | 100°C |
Min Operating Temperature | -55°C |
Voltage - Rated DC | 30V |
Output Voltage | 30V |
Number of Elements | 1 |
Output Configuration | Phototransistor |
Power Dissipation | 75mW |
Forward Current | 50mA |
Response Time | 15μs |
Rise Time | 15μs |
Forward Voltage | 1.6V |
Fall Time (Typ) | 15 μs |
Collector Emitter Voltage (VCEO) | 30V |
Max Collector Current | 30mA |
Sensing Distance | 0.200 (5.08mm) |
Collector Emitter Breakdown Voltage | 30V |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Current - Collector (Ic) (Max) | 30mA |
Reverse Breakdown Voltage | 3V |
Sensing Method | Through-Beam |
Collector Emitter Saturation Voltage | 400mV |
Current - DC Forward (If) (Max) | 50mA |
Input Current | 30mA |
Reverse Voltage (DC) | 3V |
Dark Current | 100nA |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |