Parameters | |
---|---|
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2002 |
Series | UltraFET™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 150V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 43A |
Number of Elements | 1 |
Voltage | 150V |
Power Dissipation-Max | 230W Tc |
Element Configuration | Single |
Current | 43A |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 230W |
Case Connection | DRAIN |
Turn On Delay Time | 13 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 42m Ω @ 43A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2730pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 43A Tc |
Gate Charge (Qg) (Max) @ Vgs | 175nC @ 20V |
Rise Time | 53ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 34 ns |
Turn-Off Delay Time | 47 ns |
Continuous Drain Current (ID) | 43A |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Factory Lead Time | 1 Week |
Drain-source On Resistance-Max | 0.042Ohm |
Drain to Source Breakdown Voltage | 150V |
Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
Radiation Hardening | No |
Mount | Through Hole |
RoHS Status | ROHS3 Compliant |
Mounting Type | Through Hole |
Lead Free | Lead Free |
Package / Case | TO-220-3 |
Number of Pins | 3 |