HUFA76429D3
| Parameters | |
|---|---|
| Rds On (Max) @ Id, Vgs | 23m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1480pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 20A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
| Factory Lead Time | 1 Week |
| Rise Time | 36ns |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Mount | Through Hole |
| Vgs (Max) | ±16V |
| Mounting Type | Through Hole |
| Fall Time (Typ) | 56 ns |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Turn-Off Delay Time | 60 ns |
| Continuous Drain Current (ID) | 20A |
| Weight | 343.08mg |
| Gate to Source Voltage (Vgs) | 16V |
| Transistor Element Material | SILICON |
| Drain to Source Breakdown Voltage | 60V |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Radiation Hardening | No |
| Published | 2001 |
| RoHS Status | ROHS3 Compliant |
| Series | UltraFET™ |
| Lead Free | Lead Free |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 27mOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 20A |
| Number of Elements | 1 |
| Power Dissipation-Max | 110W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 110W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7.7 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
See Relate Datesheet
