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IAUC120N04S6L008ATMA1

MOSFET N-CH 40V 120A PG-HSOG-8


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IAUC120N04S6L008ATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 168
  • Description: MOSFET N-CH 40V 120A PG-HSOG-8 (Kg)

Details

Tags

Parameters
FET Type N-Channel
Rds On (Max) @ Id, Vgs 0.8m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 2V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds 7910pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, OptiMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 150W Tc
See Relate Datesheet

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