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IAUT300N08S5N012ATMA2

IAUT300N08S5N012ATMA2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IAUT300N08S5N012ATMA2
  • Package: 8-PowerSFN
  • Datasheet: PDF
  • Stock: 692
  • Description: IAUT300N08S5N012ATMA2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Max Junction Temperature (Tj) 175°C
Height 2.4mm
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case 8-PowerSFN
Manufacturer Package Identifier PG-HSOF-8
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series OptiMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 375W Tc
Power Dissipation 375W
Turn On Delay Time 31 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 275μA
Input Capacitance (Ciss) (Max) @ Vds 16250pF @ 40V
Current - Continuous Drain (Id) @ 25°C 300A Tc
Gate Charge (Qg) (Max) @ Vgs 231nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 69 ns
Continuous Drain Current (ID) 300A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
See Relate Datesheet

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