IDB30E120ATMA1
| Parameters | |
|---|---|
| Operating Temperature - Junction | -55°C~150°C |
| Halogen Free | Halogen Free |
| Voltage - DC Reverse (Vr) (Max) | 1200V |
| Current - Average Rectified (Io) | 50A DC |
| Forward Voltage | 2.15V |
| Max Reverse Voltage (DC) | 1.2kV |
| Average Rectified Current | 50A |
| Number of Phases | 1 |
| Reverse Recovery Time | 243 ns |
| Peak Reverse Current | 100μA |
| Max Repetitive Reverse Voltage (Vrrm) | 1.2kV |
| Peak Non-Repetitive Surge Current | 102A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| HTS Code | 8541.10.00.80 |
| Terminal Form | GULL WING |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 100μA @ 1200V |
| Voltage - Forward (Vf) (Max) @ If | 2.15V @ 30A |
| Forward Current | 50A |
See Relate Datesheet
