IFS100B12N3E4_B39
| Parameters | |
|---|---|
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | 175°C TJ |
| Published | 2009 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 34 |
| ECCN Code | EAR99 |
| Additional Feature | UL RECOGNIZED |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 34 |
| JESD-30 Code | R-XUFM-X34 |
| Qualification Status | Not Qualified |
| Number of Elements | 6 |
| Configuration | Three Phase Inverter |
| Case Connection | ISOLATED |
| Power - Max | 515W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Current - Collector Cutoff (Max) | 1mA |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 100A |
| Power Dissipation-Max (Abs) | 515W |
| Turn On Time | 210 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 100A |
| Turn Off Time-Nom (toff) | 610 ns |
| IGBT Type | Trench Field Stop |
| NTC Thermistor | Yes |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 6.3nF @ 25V |
| VCEsat-Max | 2.1 V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
