IGB50N60T
| Parameters | |
|---|---|
| Surface Mount | YES |
| Number of Terminals | 2 |
| Transistor Element Material | SILICON |
| JESD-609 Code | e3 |
| Pbfree Code | icon-pbfree yes |
| Moisture Sensitivity Level (MSL) | 1 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 175°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | COLLECTOR |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| JEDEC-95 Code | TO-263AB |
| Power Dissipation-Max (Abs) | 333W |
| Turn On Time | 60 ns |
| Collector Current-Max (IC) | 100A |
| Turn Off Time-Nom (toff) | 396 ns |
| Collector-Emitter Voltage-Max | 600V |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5.7V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
