IGN1011L1200
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Surface Mount | YES |
| Transistor Element Material | GALLIUM NITRIDE |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| JESD-30 Code | R-CDFM-F2 |
| Operating Temperature (Min) | -55°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | DEPLETION MODE |
| Case Connection | SOURCE |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| DS Breakdown Voltage-Min | 180V |
| FET Technology | HIGH ELECTRON MOBILITY |
| Highest Frequency Band | L B |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
