banner_page

IGO60R070D1AUMA1

IC GAN FET 600V 60A 20DSO


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IGO60R070D1AUMA1
  • Package: 20-PowerSOIC (0.433, 11.00mm Width)
  • Datasheet: PDF
  • Stock: 248
  • Description: IC GAN FET 600V 60A 20DSO (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case 20-PowerSOIC (0.433, 11.00mm Width)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolGaN™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology GaNFET (Gallium Nitride)
Power Dissipation-Max 125W Tc
FET Type N-Channel
Vgs(th) (Max) @ Id 1.6V @ 2.6mA
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 400V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Drain to Source Voltage (Vdss) 600V
Vgs (Max) -10V
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good