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IGP20N65F5XKSA1

IGP20N65F5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IGP20N65F5XKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 937
  • Description: IGP20N65F5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Max Collector Current 42A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.6V
Turn On Time 32 ns
Test Condition 400V, 10A, 32 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 20A
Turn Off Time-Nom (toff) 211 ns
IGBT Type Trench
Gate Charge 48nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 20ns/165ns
Switching Energy 160μJ (on), 60μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2013
Series TrenchStop™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 125W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 125W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
See Relate Datesheet

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