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IGW40N65F5FKSA1

IGW40N65F5FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IGW40N65F5FKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 113
  • Description: IGW40N65F5FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Power Dissipation 255W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 74A
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.6V
Test Condition 400V, 20A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A
Gate Charge 95nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 19ns/160ns
Switching Energy 360μJ (on), 100μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 4.8V
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 255W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
See Relate Datesheet

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