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IGW75N65H5XKSA1

Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IGW75N65H5XKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 549
  • Description: Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchStop™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 395W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 395W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 120A
Collector Emitter Breakdown Voltage 650V
Turn On Time 61 ns
Test Condition 400V, 75A, 8 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Turn Off Time-Nom (toff) 232 ns
IGBT Type Trench
Gate Charge 160nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 28ns/174ns
Switching Energy 2.25mJ (on), 950μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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