IHD10N60RA
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Series | TrenchStop® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 2 |
| Terminal Finish | MATTE TIN |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 110W |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 110W |
| Transistor Application | POWER CONTROL |
| Halogen Free | Not Halogen Free |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 20A |
| Collector Emitter Breakdown Voltage | 600V |
| Test Condition | 400V, 10A, 23 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 10A |
| Turn Off Time-Nom (toff) | 355 ns |
| IGBT Type | Trench |
| Gate Charge | 62nC |
| Current - Collector Pulsed (Icm) | 30A |
| Td (on/off) @ 25°C | -/170ns |
| Switching Energy | 270μJ |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5.7V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
