Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Tube |
Published | 2009 |
Series | TrenchStop® |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 138W |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 138W |
Transistor Application | MOTOR CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 16A |
Reverse Recovery Time | 185 ns |
JEDEC-95 Code | TO-220AB |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Turn On Time | 69 ns |
Test Condition | 610V, 10A, 81 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 10A |
Turn Off Time-Nom (toff) | 769 ns |
IGBT Type | Trench Field Stop |
Gate Charge | 53nC |
Current - Collector Pulsed (Icm) | 24A |
Td (on/off) @ 25°C | 45ns/520ns |
Switching Energy | 1.46mJ |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6.5V |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |