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IHW30N60TFKSA1

IHW30N60TFKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IHW30N60TFKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 299
  • Description: IHW30N60TFKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 187W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-247AC
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 60A
Power Dissipation-Max (Abs) 187W
Turn On Time 50 ns
Test Condition 400V, 30A, 10.6 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Turn Off Time-Nom (toff) 382 ns
IGBT Type Trench Field Stop
Gate Charge 167nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 23ns/254ns
Switching Energy 770μJ
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.7V
RoHS Status RoHS Compliant
See Relate Datesheet

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