Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Operating Temperature | -40°C~175°C TJ |
Packaging | Tube |
Published | 2015 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 429W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Element Configuration | Single |
Power Dissipation | 215W |
Input Type | Standard |
Power - Max | 429W |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.35kV |
Max Collector Current | 80A |
Collector Emitter Breakdown Voltage | 1.35kV |
Voltage - Collector Emitter Breakdown (Max) | 1350V |
Collector Emitter Saturation Voltage | 1.85V |
Test Condition | 600V, 40A, 7.5 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 40A |
IGBT Type | Trench |
Gate Charge | 365nC |
Current - Collector Pulsed (Icm) | 120A |
Td (on/off) @ 25°C | -/343ns |
Switching Energy | 2.5mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6.4V |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |