banner_page

IJW120R100T1FKSA1

POWER FIELD-EFFECT TRANSISTOR


  • Manufacturer: Rochester Electronics, LLC
  • Nocochips NO: 699-IJW120R100T1FKSA1
  • Package: TO-247-3
  • Datasheet: -
  • Stock: 220
  • Description: POWER FIELD-EFFECT TRANSISTOR (Kg)

Details

Tags

Parameters
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 190W
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 19.5V VGS
Drain to Source Voltage (Vdss) 1.2V
Current - Drain (Idss) @ Vds (Vgs=0) 1.5μA @ 1.2V
Resistance - RDS(On) 100mOhms
Current Drain (Id) - Max 26A
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good