Parameters | |
---|---|
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~175°C TJ |
Packaging | Cut Tape (CT) |
Published | 2003 |
Series | TrenchStop® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | *KD04N60 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 75W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Reverse Recovery Time | 43ns |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 8A |
Power Dissipation-Max (Abs) | 75W |
Turn On Time | 20 ns |
Test Condition | 400V, 4A, 43 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 4A |
Turn Off Time-Nom (toff) | 342 ns |
IGBT Type | Trench |
Gate Charge | 27nC |
Current - Collector Pulsed (Icm) | 12A |
Td (on/off) @ 25°C | 14ns/146ns |
Switching Energy | 240μJ |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5.7V |
RoHS Status | RoHS Compliant |