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IKD04N60RF

IKD04N60RF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IKD04N60RF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: -
  • Stock: 762
  • Description: IKD04N60RF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number *KD04N60
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 75W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 34ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 8A
Power Dissipation-Max (Abs) 75W
Turn On Time 18 ns
Test Condition 400V, 4A, 43 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 4A
Turn Off Time-Nom (toff) 216 ns
IGBT Type Trench
Gate Charge 27nC
Current - Collector Pulsed (Icm) 12A
Td (on/off) @ 25°C 12ns/116ns
Switching Energy 110μJ
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.7V
RoHS Status RoHS Compliant
See Relate Datesheet

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