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IKD06N60RAATMA1

IKD06N60RAATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IKD06N60RAATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 421
  • Description: IKD06N60RAATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 100W
Transistor Application GENERAL PURPOSE
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 12A
Reverse Recovery Time 68 ns
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Turn On Time 22 ns
Test Condition 400V, 6A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 6A
Turn Off Time-Nom (toff) 335 ns
IGBT Type Trench Field Stop
Gate Charge 48nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 12ns/127ns
Switching Energy 110μJ (on), 220μJ (off)
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchStop™
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Max Power Dissipation 100W
See Relate Datesheet

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