IKD10N60R
| Parameters | |
|---|---|
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | *KD10N60 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Case Connection | COLLECTOR |
| Mounting Type | Surface Mount |
| Input Type | Standard |
| Power - Max | 150W |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Reverse Recovery Time | 62ns |
| Surface Mount | YES |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 20A |
| Power Dissipation-Max (Abs) | 150W |
| Turn On Time | 24 ns |
| Test Condition | 400V, 10A, 23 Ω, 15V |
| Transistor Element Material | SILICON |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 10A |
| Turn Off Time-Nom (toff) | 428 ns |
| IGBT Type | Trench |
| Gate Charge | 64nC |
| Operating Temperature | -40°C~175°C TJ |
| Current - Collector Pulsed (Icm) | 30A |
| Td (on/off) @ 25°C | 14ns/192ns |
| Switching Energy | 590μJ |
| Packaging | Cut Tape (CT) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5.7V |
| RoHS Status | RoHS Compliant |
| Published | 2011 |
| Series | TrenchStop® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
See Relate Datesheet
