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IKD10N60RATMA1

IKD10N60RATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IKD10N60RATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 836
  • Description: IKD10N60RATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchStop™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 150W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 150W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 20A
Reverse Recovery Time 62 ns
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Turn On Time 24 ns
Test Condition 400V, 10A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 10A
Turn Off Time-Nom (toff) 428 ns
IGBT Type Trench Field Stop
Gate Charge 64nC
Current - Collector Pulsed (Icm) 30A
Td (on/off) @ 25°C 14ns/192ns
Switching Energy 210μJ (on), 380μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.7V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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