Parameters | |
---|---|
Packaging | Tube |
Published | 2017 |
Series | TrenchStop™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Input Type | Standard |
Power - Max | 652W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 100A |
Turn On Time | 79 ns |
Test Condition | 400V, 50A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 50A |
Turn Off Time-Nom (toff) | 530 ns |
IGBT Type | Trench Field Stop |
Gate Charge | 235nC |
Current - Collector Pulsed (Icm) | 200A |
Td (on/off) @ 25°C | 34ns/312ns |
Switching Energy | 3.8mJ (on), 3.3mJ (off) |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~175°C TJ |