Parameters | |
---|---|
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Surface Mount | NO |
Transistor Element Material | SILICON |
Packaging | Tube |
Published | 2013 |
Series | TrenchStop® |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Subcategory | Insulated Gate BIP Transistors |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-PSIP-T3 |
Qualification Status | Not Qualified |
Operating Temperature (Max) | 175°C |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 100W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Reverse Recovery Time | 68ns |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 12A |
Power Dissipation-Max (Abs) | 100W |
Turn On Time | 22 ns |
Test Condition | 400V, 6A, 23 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 6A |
Turn Off Time-Nom (toff) | 335 ns |
IGBT Type | Trench |
Gate Charge | 48nC |
Current - Collector Pulsed (Icm) | 18A |
Td (on/off) @ 25°C | 12ns/127ns |
Switching Energy | 330μJ |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5.7V |
RoHS Status | RoHS Compliant |