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IKW30N60DTPXKSA1

IKW30N60DTPXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IKW30N60DTPXKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 423
  • Description: IKW30N60DTPXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2016
Series TrenchStop™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 200W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Power - Max 200W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 53A
Reverse Recovery Time 76 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 38 ns
Test Condition 400V, 30A, 10.5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 30A
Turn Off Time-Nom (toff) 279 ns
IGBT Type Trench Field Stop
Gate Charge 130nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 15ns/179ns
Switching Energy 710μJ (on), 420μJ (off)
RoHS Status ROHS3 Compliant
See Relate Datesheet

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