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IKW30N65ES5XKSA1

IKW30N65ES5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IKW30N65ES5XKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 980
  • Description: IKW30N65ES5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchStop™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation 188W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 188W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 62A
Reverse Recovery Time 75 ns
Collector Emitter Breakdown Voltage 650V
Turn On Time 30 ns
Test Condition 400V, 30A, 13 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 30A
Turn Off Time-Nom (toff) 204 ns
IGBT Type Trench
Gate Charge 70nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 17ns/124ns
Switching Energy 560μJ (on), 320μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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