banner_page

IKW40N65ES5XKSA1

Trans IGBT Chip N-CH 650V 79A 230000mW 3-Pin(3+Tab) TO-247 Tube


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IKW40N65ES5XKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 781
  • Description: Trans IGBT Chip N-CH 650V 79A 230000mW 3-Pin(3+Tab) TO-247 Tube (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchStop™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Max Power Dissipation 230W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 230W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 79A
Reverse Recovery Time 73 ns
Collector Emitter Breakdown Voltage 650V
Turn On Time 36 ns
Test Condition 400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 40A
Turn Off Time-Nom (toff) 204 ns
IGBT Type Trench
Gate Charge 95nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 19ns/130ns
Switching Energy 860μJ (on), 400μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good