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IKW50N60DTPXKSA1

IKW50N60DTPXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IKW50N60DTPXKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 449
  • Description: IKW50N60DTPXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2016
Series TrenchStop™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 319.2W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Power - Max 319.2W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 80A
Reverse Recovery Time 115 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 55 ns
Test Condition 400V, 50A, 7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 50A
Turn Off Time-Nom (toff) 332 ns
IGBT Type Trench Field Stop
Gate Charge 249nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 20ns/215ns
Switching Energy 1.53mJ (on), 850μJ (off)
RoHS Status ROHS3 Compliant
See Relate Datesheet

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