Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~175°C TJ |
Packaging | Tube |
Published | 2016 |
Series | TrenchStop™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | Not Applicable |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Max Power Dissipation | 319.2W |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Input Type | Standard |
Power - Max | 319.2W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.8V |
Max Collector Current | 80A |
Reverse Recovery Time | 115 ns |
Collector Emitter Breakdown Voltage | 600V |
Turn On Time | 55 ns |
Test Condition | 400V, 50A, 7 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 50A |
Turn Off Time-Nom (toff) | 332 ns |
IGBT Type | Trench Field Stop |
Gate Charge | 249nC |
Current - Collector Pulsed (Icm) | 150A |
Td (on/off) @ 25°C | 20ns/215ns |
Switching Energy | 1.53mJ (on), 850μJ (off) |
RoHS Status | ROHS3 Compliant |