IKZ75N65ES5XKSA1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | TO-247-4 |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~175°C TJ |
| Packaging | Tube |
| Published | 2014 |
| Series | TrenchStop™ 5 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSFM-T4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 395W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Reverse Recovery Time | 72ns |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 80A |
| Turn On Time | 70 ns |
| Test Condition | 400V, 15A, 22.3 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.75V @ 15V, 75A |
| Turn Off Time-Nom (toff) | 475 ns |
| IGBT Type | Trench |
| Gate Charge | 164nC |
| Current - Collector Pulsed (Icm) | 300A |
| Td (on/off) @ 25°C | 46ns/405ns |
| Switching Energy | 1.3mJ (on), 1.5mJ (off) |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
