IMB2AT110
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Package / Case | SMD/SMT |
| Number of Pins | 6 |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN SILVER COPPER |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 |
| HTS Code | 8541.21.00.75 |
| Subcategory | BIP General Purpose Small Signals |
| Voltage - Rated DC | -50V |
| Max Power Dissipation | 300mW |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -30mA |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Pin Count | 6 |
| Number of Elements | 2 |
| Polarity | PNP |
| Element Configuration | Dual |
| Power Dissipation | 300mW |
| Transistor Application | SWITCHING |
| Collector Emitter Voltage (VCEO) | 300mV |
| Max Collector Current | 100mA |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 50V |
| hFE Min | 68 |
| DC Current Gain-Min (hFE) | 68 |
| Continuous Collector Current | -100mA |
| VCEsat-Max | 0.3 V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
