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IMD10AT108

TRANS NPN/PNP PREBIAS 0.3W SMT6


  • Manufacturer: ROHM Semiconductor
  • Nocochips NO: 687-IMD10AT108
  • Package: SC-74, SOT-457
  • Datasheet: PDF
  • Stock: 222
  • Description: TRANS NPN/PNP PREBIAS 0.3W SMT6 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 74
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 10
HTS Code 8541.21.00.75
Subcategory BIP General Purpose Small Signals
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number MD10A
Pin Count 6
JESD-30 Code R-PDSO-G6
Max Output Current 500mA
Operating Supply Voltage 50V
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 300mW
Transistor Application SWITCHING
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V / 68 @ 100mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA / 300mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 50V
Current - Collector (Ic) (Max) 100mA 500mA
Transition Frequency 250MHz
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 50V
Frequency - Transition 250MHz 200MHz
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Resistor - Base (R1) 10k Ω, 100 Ω
Continuous Collector Current -500mA
Resistor - Emitter Base (R2) 10k Ω
Height 1.1mm
Length 2.9mm
Width 1.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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