IMD8AT108
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-74, SOT-457 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 1999 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Max Operating Temperature | 150°C |
| Additional Feature | DIGITAL, BUILT-IN BIAS RESISTOR |
| HTS Code | 8541.21.00.75 |
| Subcategory | BIP General Purpose Small Signal |
| Max Power Dissipation | 300mW |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 100mA |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Pin Count | 6 |
| Number of Elements | 2 |
| Polarity | NPN, PNP |
| Element Configuration | Dual |
| Transistor Application | SWITCHING |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA, 5mA |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 250MHz |
| hFE Min | 100 |
| Resistor - Base (R1) | 47k Ω |
| VCEsat-Max | 0.3 V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
