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IMH10AT110

TRANS PREBIAS DUAL NPN SMT6


  • Manufacturer: ROHM Semiconductor
  • Nocochips NO: 687-IMH10AT110
  • Package: SC-74, SOT-457
  • Datasheet: PDF
  • Stock: 807
  • Description: TRANS PREBIAS DUAL NPN SMT6 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR RATIO 21
HTS Code 8541.21.00.75
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number *MH10
Pin Count 6
Max Output Current 100mA
Operating Supply Voltage 50V
Number of Elements 2
Polarity NPN
Element Configuration Dual
Power Dissipation 150mW
Transistor Application SWITCHING
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
hFE Min 80
Resistor - Base (R1) 2.2k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47k Ω
VCEsat-Max 0.3 V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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