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IPA60R099P6XKSA1

MOSFET N-CH 600V TO220FP-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPA60R099P6XKSA1
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 366
  • Description: MOSFET N-CH 600V TO220FP-3 (Kg)

Details

Tags

Parameters
FET Type N-Channel
Rds On (Max) @ Id, Vgs 99m Ω @ 14.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.21mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3330pF @ 100V
Current - Continuous Drain (Id) @ 25°C 37.9A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 37.9A
Gate to Source Voltage (Vgs) 30V
Max Dual Supply Voltage 600V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™ P6
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 34W Tc
Turn On Delay Time 20 ns
See Relate Datesheet

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