Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2014 |
Series | CoolMOS™ P7 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | Not Applicable |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 24W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 24W |
Case Connection | ISOLATED |
Turn On Delay Time | 17 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 280m Ω @ 3.8A, 10V |
Vgs(th) (Max) @ Id | 4V @ 190μA |
Input Capacitance (Ciss) (Max) @ Vds | 761pF @ 400V |
Current - Continuous Drain (Id) @ 25°C | 12A Tc |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 60 ns |
Continuous Drain Current (ID) | 12A |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.28Ohm |
Drain to Source Breakdown Voltage | 600V |
Pulsed Drain Current-Max (IDM) | 36A |
Avalanche Energy Rating (Eas) | 38 mJ |
Max Junction Temperature (Tj) | 150°C |
Height | 20.7mm |
RoHS Status | ROHS3 Compliant |