banner_page

IPA60R450E6XKSA1

Trans MOSFET N-CH 650V 9.2A 3-Pin(3+Tab) TO-220 Full-Pack


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPA60R450E6XKSA1
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 819
  • Description: Trans MOSFET N-CH 650V 9.2A 3-Pin(3+Tab) TO-220 Full-Pack (Kg)

Details

Tags

Parameters
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 9.2A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.45Ohm
Pulsed Drain Current-Max (IDM) 26A
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 30W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 30W
Case Connection ISOLATED
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 450m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 280μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 100V
Current - Continuous Drain (Id) @ 25°C 9.2A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good