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IPA70R750P7SXKSA1

MOSFET N-CH TO220-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPA70R750P7SXKSA1
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 995
  • Description: MOSFET N-CH TO220-3 (Kg)

Details

Tags

Parameters
Vgs(th) (Max) @ Id 3.5V @ 70μA
Package / Case TO-220-3 Full Pack
Input Capacitance (Ciss) (Max) @ Vds 306pF @ 400V
Current - Continuous Drain (Id) @ 25°C 6.5A Tc
Surface Mount NO
Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 400V
Drain to Source Voltage (Vdss) 700V
Transistor Element Material SILICON
Drive Voltage (Max Rds On,Min Rds On) 10V
Operating Temperature -40°C~150°C TJ
Vgs (Max) ±16V
Packaging Tube
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.75Ohm
Published 2014
Pulsed Drain Current-Max (IDM) 15.4A
DS Breakdown Voltage-Min 700V
Series CoolMOS™ P7
RoHS Status ROHS3 Compliant
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 21.2W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Factory Lead Time 1 Week
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 750m Ω @ 1.4A, 10V
Mounting Type Through Hole
See Relate Datesheet

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