Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Tube |
Published | 2015 |
Series | CoolMOS™ CE |
Pbfree Code | yes |
Part Status | Discontinued |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 34W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | ISOLATED |
Turn On Delay Time | 25 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 460m Ω @ 7.1A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 680μA |
Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 64nC @ 10V |
Rise Time | 15ns |
Drain to Source Voltage (Vdss) | 800V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 10 ns |
Turn-Off Delay Time | 72 ns |
Continuous Drain Current (ID) | 5A |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 10.8A |
Drain-source On Resistance-Max | 0.46Ohm |
DS Breakdown Voltage-Min | 800V |
Avalanche Energy Rating (Eas) | 470 mJ |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |