IPAN60R800CEXKSA1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | CoolMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Power Dissipation-Max | 27W Tc |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 800m Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 170μA |
| Input Capacitance (Ciss) (Max) @ Vds | 373pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 8.4A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 17.2nC @ 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 8.4A |
| FET Feature | Super Junction |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
