Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Tube |
Published | 2014 |
Series | CoolMOS™ P7 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | Not Applicable |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 24.9W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | ISOLATED |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 600m Ω @ 1.8A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 90μA |
Input Capacitance (Ciss) (Max) @ Vds | 364pF @ 400V |
Current - Continuous Drain (Id) @ 25°C | 8.5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 10V |
Drain to Source Voltage (Vdss) | 700V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±16V |
JEDEC-95 Code | TO-220AB |
Drain-source On Resistance-Max | 0.6Ohm |
Pulsed Drain Current-Max (IDM) | 20.5A |
DS Breakdown Voltage-Min | 700V |
RoHS Status | ROHS3 Compliant |