banner_page

IPAN80R360P7XKSA1

MOSFET N-CHANNEL 800V 13A TO220


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPAN80R360P7XKSA1
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 814
  • Description: MOSFET N-CHANNEL 800V 13A TO220 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series CoolMOS™ P7
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 30W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 360m Ω @ 5.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 280μA
Input Capacitance (Ciss) (Max) @ Vds 930pF @ 500V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.36Ohm
Pulsed Drain Current-Max (IDM) 34A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 34 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good