IPAW60R280CEXKSA1
| Parameters | |
|---|---|
| Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
| Mount | Through Hole |
| Drain to Source Voltage (Vdss) | 600V |
| Mounting Type | Through Hole |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Package / Case | TO-220-3 Full Pack, Variant |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Continuous Drain Current (ID) | 19.3A |
| Operating Temperature | -40°C~150°C TJ |
| Threshold Voltage | 3V |
| Packaging | Tube |
| JEDEC-95 Code | TO-220AB |
| Published | 2013 |
| Drain-source On Resistance-Max | 0.28Ohm |
| Series | CoolMOS™ |
| Pbfree Code | yes |
| Part Status | Active |
| Pulsed Drain Current-Max (IDM) | 40A |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| DS Breakdown Voltage-Min | 600V |
| Number of Terminations | 3 |
| Avalanche Energy Rating (Eas) | 284 mJ |
| ECCN Code | EAR99 |
| FET Feature | Super Junction |
| Technology | MOSFET (Metal Oxide) |
| REACH SVHC | No SVHC |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| RoHS Status | ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 32W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | ISOLATED |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 280m Ω @ 6.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 430μA |
| Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 19.3A Tc |
| Factory Lead Time | 1 Week |
See Relate Datesheet
