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IPAW60R600CEXKSA1

MOSFET N-CH 600V TO220-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPAW60R600CEXKSA1
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 135
  • Description: MOSFET N-CH 600V TO220-3 (Kg)

Details

Tags

Parameters
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 28W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 2.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 444pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10.3A Tc
Gate Charge (Qg) (Max) @ Vgs 20.5nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 10.3A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.6Ohm
Pulsed Drain Current-Max (IDM) 19A
DS Breakdown Voltage-Min 600V
FET Feature Super Junction
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2013
Series CoolMOS™
Pbfree Code yes
See Relate Datesheet

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