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IPB010N06NATMA1

IPB010N06NATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB010N06NATMA1
  • Package: TO-263-7, D2Pak (6 Leads + Tab)
  • Datasheet: PDF
  • Stock: 739
  • Description: IPB010N06NATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins 7
Supplier Device Package PG-TO263-7
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Published 2006
Series OptiMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 300W Tc
Power Dissipation 300W
Turn On Delay Time 37 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 280μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 15000pF @ 30V
Current - Continuous Drain (Id) @ 25°C 45A Ta 180A Tc
Gate Charge (Qg) (Max) @ Vgs 208nC @ 10V
Rise Time 36ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 74 ns
Continuous Drain Current (ID) 180A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain to Source Breakdown Voltage 60V
Drain to Source Resistance 800μOhm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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