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IPB011N04LGATMA1

Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) TO-263


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IPB011N04LGATMA1
  • Package: TO-263-7, D2Pak (6 Leads + Tab)
  • Datasheet: PDF
  • Stock: 997
  • Description: Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) TO-263 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 7
JESD-30 Code R-PSSO-G6
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 250W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.1m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 2V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 29000pF @ 20V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 346nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 180A
Drain-source On Resistance-Max 0.0014Ohm
Pulsed Drain Current-Max (IDM) 1260A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 525 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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